Semiconductor device

ABSTRACT

There is provided a semiconductor device whose cost is low and whose case is restrained from breaking. In the semiconductor device having a semiconductor sensor chip, a signal processing circuit for processing signals output from the semiconductor sensor chip and a hollow case for mounting the semiconductor sensor chip and the signal processing circuit therein, the case is constructed by bonding a concave bottom member whose one end is opened with a plate-like lid member that covers the opening of the bottom member. Then, the bottom and lid members are both made of a semiconductor material and are bonded by means of anode bonding or metal bonding for example.

This is a Continuation of U.S. application Ser. No. 12/073,677, filedMar. 7, 2008, now U.S. Pat. No. 7,939,931 and allowed on Jan. 5, 2011,the subject matter of which is incorporated herein by reference.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC 119 from Japanese PatentApplication No. 2007-085405, the disclosure of which is incorporated byreference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having asemiconductor sensor chip.

2. Description of Related Art

Acceleration and angular velocity sensors (gyroscope) are typicallyknown as semiconductor sensor chips for detecting motions by changes ofstress and displacement of a movable portion. It is also known that suchsemiconductor sensor chips are fabricated through three-dimensionalprocessing implemented on silicon by using a silicon micro-machiningtechnology for example.

Normally, the semiconductor device is constructed by mounting thesemiconductor sensor chip within a hollow case so that its sensorsection (operating section) is not affected (see Japanese PatentApplication Laid-Open Nos. 2003-163304, 9-292408 and 2005-127750, forexample).

As typified by the patent documents cited above, the case for mountingthe semiconductor sensor chip is constructed as follows for example:

1) construct by members made from ceramics; and

2) a semiconductor chip for processing output signals of thesemiconductor sensor chip, i.e., a silicon substrate, is mounted as apart of the case and is combined with a glass member.

However, there have been problems that the case composed of the membermade from ceramic is very expensive and that the case constructed bycoupling members of different types of materials such as the combinationof silicon and glass member is easy to be broken from a difference oftheir coefficient of expansion.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor device whose cost is lowand whose case is restrained from breaking.

According to an aspect of the invention, there is provided asemiconductor device, including:

a hollow case constructed by bonding a first member made of asemiconductor material with a second member made of the semiconductormaterial;

a semiconductor sensor chip mounted within the case; and

a signal processing circuit that is disposed within the case and thatprocesses signals outputted from the semiconductor sensor chip.

It is possible to manufacture the semiconductor device of the inventionat low cost while restraining defective bonding and breakage of the caseas compared to a case of using ceramic materials by constructing thehollow case for mounting the semiconductor sensor chip and the signalprocessing circuit therein by the first and second members made ofsilicon.

Preferably, the signal processing circuit is formed on either one of thefirst and second members in the semiconductor device of the invention.

Furthermore, one member among the first and second members may be aconcave member and another member may be a plate-like member in thesemiconductor device of the invention. Still more, the concave membermay be constructed by bonding a plate-like member with a frame member.

Preferably, the first and second members are provided with wires and thewire of the first member may be electrically connected with the wire ofthe second member via a conductive member on a face where the firstmember is bonded with the second member in the semiconductor device ofthe invention.

Preferably, an insulating material is applied around the conductivematerial and part where the first member is bonded with the secondmaterial to seal them in the semiconductor device of the invention.

Preferably, a sealing material is applied to seal around the case in thesemiconductor device of the invention.

According to the invention, it is possible to provide the semiconductordevice whose cost is low and whose case is restrained from breaking.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred exemplary embodiments of the present invention will bedescribed in detail based on the following figures, wherein:

FIG. 1 is a schematic section view showing a semiconductor device of afirst embodiment of the invention;

FIG. 2A is a perspective view showing a manufacturing step of thesemiconductor device of the first embodiment;

FIG. 2B is a perspective view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 2C is a perspective view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 2D is a perspective view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 2E is a perspective view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 3A is a section view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 3B is a section view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 3C is a section view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 3D is a section view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 3E is a section view showing the manufacturing step of thesemiconductor device of the first embodiment;

FIG. 4 is a schematic section view showing another semiconductor deviceof the first embodiment;

FIG. 5 is a schematic section view showing a semiconductor device of asecond embodiment of the invention;

FIG. 6A is a perspective view showing a manufacturing step of thesemiconductor device of the second embodiment;

FIG. 6B is a perspective view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 6C is a perspective view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 6D is a perspective view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 6E is a perspective view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 7A is a section view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 7B is a section view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 7C is a section view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 7D is a section view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 7E is a section view showing the manufacturing step of thesemiconductor device of the second embodiment;

FIG. 8 is a schematic section view showing another semiconductor deviceof the second embodiment; and

FIG. 9 is a schematic section view showing another semiconductor deviceof the second embodiment

DETAILED DESCRIPTION OF THE INVENTION

Exemplary embodiments of the invention will be explained below withreference to the drawings. It is noted that members having substantiallythe same function are denoted by the same reference numerals throughoutthe drawings and an overlapped explanation thereof may be omitted.

(First Embodiment)

FIG. 1 is a schematic section view showing a semiconductor device of afirst embodiment of the invention.

As shown in FIG. 1, the semiconductor device 100 of the first embodimentincludes a semiconductor sensor chip 10, a signal processing circuit 12for processing a signal outputted from the semiconductor sensor chip 10and a hollow case 20 for mounting the semiconductor sensor chip 10 andthe signal processing circuit 12 therein.

The semiconductor sensor chip 10 may be an acceleration sensor, anangular velocity sensor (gyroscope), a resonator (filter), a relay orthe like. These may be fabricated by implementing three-dimensionalprocessing on silicon by using the silicon micro-machining technology.

The signal processing circuit 12 is a circuit for processing signalsoutputted from the semiconductor sensor chip 10 and is configured byintegrating an amplifying circuit for amplifying the output signals, atemperature compensating circuit for compensating temperaturecharacteristics of sensitivity and voltage, a noise removing circuit forremoving noise and the like.

The case 20 is constructed by a concave bottom member 22 having aconcave portion 26 whose one end is opened and a plate-like lid member24 that covers the opening of the bottom member 22. They are made ofsilicon and are bonded by means of anode bonding or metal bonding.

The concave portion 26 of the bottom member 22 has a stepped portion 28so that a diameter of the opening is widened more than that of thebottom. A terminal 30 for electrically connecting to the outside, athrough wire 32 which is electrically connected with the terminal 30 andpenetrates through the bottom member 22 in a thickness direction fromthe stepped portion 28, and an external terminal 34 which is disposed onthe back of the bottom member 22 and is electrically connected with thethrough wire 32 are disposed on the stepped portion 28. These throughwires 32 and others are disposed at predetermined intervals along foursides of the semiconductor sensor chip 10 mounted in the case.

The signal processing circuit 12 is formed in a bottom of the bottommember 22 made of silicon and is integrated by means of semiconductorprocessing such as ion-implantation, lithography, etching and others. Inaddition, the bottom member 22 is provided with the semiconductor sensorchip 10 mounted on the bottom on which the signal processing circuit 12has been formed. The semiconductor sensor chip 10 and the signalprocessing circuit 12 are electrically connected with the terminal 30connected with the through wire 32, respectively, by wires 36.

Next, an exemplary manufacturing method of the semiconductor device 100of the present embodiment will be described. FIGS. 2A-2E and FIGS. 3A-3Eshow manufacturing steps of the semiconductor device of the firstembodiment. It is noted that FIGS. 2A-2E are perspective views showingthe manufacturing steps of the semiconductor device and FIGS. 3A-3E aresection views showing the manufacturing steps of the semiconductordevice.

According to the manufacturing method of the semiconductor device 100 ofthe present embodiment, a silicon wafer 40 for the bottom members isprepared at first and a large number of chips corresponding to thebottom member 22 is formed thereon as shown in FIGS. 2A and 3A.Specifically, the large number of concave portions 26 of the bottommembers 22 is formed by means of the three-dimensional processingimplemented by using the silicon micro-machining technology for example.Here, through holes 26A, through which the through wires are embedded,are also formed.

Next, the signal processing circuit 12 is formed in the bottom face ofthe concave portion 26 of each of the bottom member 22 by thesemiconductor processing as shown in FIGS. 2B and 3B. Successively, athrough wire is embedded to each through hole 26 a bottom member 22 bymeans of plating for example and the terminal 30 and an externalterminal 34 that are connected to the both ends of the through wire areformed. Then, the signal processing circuit 12 is electrically connectedwith the terminal 30 provided at one end of the through wire 32 by awire 36 by carrying out wire-bonding.

Next, the semiconductor sensor chip 10 is mounted on the bottom of eachbottom member 22 on which the signal processing circuit 12 has beenformed as shown in FIGS. 2C and 3C. Then, the semiconductor sensor chip10 is electrically connected with the terminal 30 provided at one end ofthe through wire 32 by the wire 36 by carrying out wire-bonding.

Next, a silicon wafer 42, which has the same diameter with the siliconwafer 40 and composes the lid member 24, is superimposed on and bondedwith the silicon wafer 40 in which the concave portions 26 of the bottommembers 22 have been formed by means of anode bonding or metal bondingas shown in FIGS. 2D and 3D.

Then, the two bonded silicon wafers are cut into individual pieces bymeans of a dicing saw or the like as shown in FIGS. 2E and 3E.

Through the above processes, the semiconductor device 100 is obtained.

In the semiconductor device 100 of the present embodiment describedabove, the hollow case 20 mounting the semiconductor sensor chip 10 andthe signal processing circuit 12 is constructed by bonding the bottommember 22 with the lid member 24, both made of silicon. Therefore,manufacturing costs are lower compared with when using a ceramicmaterial. In addition, because the hollow case 20 is constructed bybonding members made of silicon, it is possible to reduce the occurrenceof defective bonding and breakage of the hollow case 20 caused by adifference in coefficients of expansion. Still more, because strainbetween the members of the case 20 which may be caused by heat isreduced, it becomes possible to reduce the influence thereof on thesemiconductor sensor chip, and to conduct measurements with improvedsensitivity.

Because the members composing the case 20 (the bottom member in thepresent embodiment) are made of silicon in the semiconductor device 100of the present embodiment, the signal processing circuit 12 is formed bydirectly integrating on the members through the semiconductorprocessing. Therefore, it is not necessary to provide a separatesemiconductor chip for the signal processing circuit. This allows thethickness of the semiconductor device itself to be reduced, the chipmounting area to be reduced and space-saving to be realized.

It is noted that the mode of forming the case 20 by bonding the concavebottom member 22 with the plate-like lid member 24 has been explained inthe present embodiment, the present invention is not limited to suchmode and may adopt another mode of forming the case 20 by bonding aplate-like bottom member 22 with a concave lid member 24 as shown inFIG. 4 for example.

(Second Embodiment)

FIG. 5 is a schematic section view showing a semiconductor device of asecond embodiment of the invention.

The semiconductor device 102 of the second embodiment has thesemiconductor sensor chip 10, the signal processing circuit 12 forprocessing a signal outputted from the semiconductor sensor chip 10 andthe hollow case 20 for mounting the semiconductor sensor chip 10 and thesignal processing circuit 12 therein.

The semiconductor sensor chip 10 may be an acceleration sensor, anangular velocity sensor (gyroscope), a resonator (filter), and a relayor the like. These may be fabricated by implementing three-dimensionalprocessing on silicon by using the silicon micro-machining technologyfor example.

The signal processing circuit 12 is a circuit for processing outputsignals outputted from the semiconductor sensor chip 10 and isconfigured by integrating an amplifying circuit for amplifying theoutput signals, a temperature compensating circuit for compensatingtemperature characteristics of sensitivity and voltage, a noise removingcircuit for removing noise, and the like.

The case 20 is constructed by bonding a concave bottom member 22 havinga concave portion 26 whose one end is opened with a plate-like lidmember 24 that covers the opening of the bottom member 22. The bottommember 22 and the lid member 24 are both made of silicon.

The bottom member 22 is constructed by bonding a plate-like member 22Awith a frame member 22B, thus forming the concave portion 26. Theplate-like member 22A is bonded with the frame member 22B by means ofanode bonding or metal bonding for example.

The plate-like member 22A is provided with the terminal 30 for externalelectrical connection, the through wire 32 which is electricallyconnected with the terminal 30 and penetrates through the plate-likemember 22A in a thickness direction, and the external terminal 34 whichis disposed on the back of the plate-like member 22A and is electricallyconnected with the through wire 32.

Meanwhile, the frame member 22B is provided with a wire 32A that isconnected with the terminal 30 of the plate-like member 22A and isformed so as to extend from the terminal 30 along an inner wall face ofthe frame member 22B to an end face (on the opposite side from a facebonded with the plate-like member 22A). These wires 32A and the throughholes 32 are disposed at predetermined intervals along four sides of thesemiconductor sensor chip 10 mounted in the case 20.

Then, the semiconductor sensor chip 10 is mounted on the bottom face ofthe bottom member 22 (bottom face of the plate-like member 22A) and iselectrically connected with the terminal 30, which is connected with thethrough wire 32 by the wire 36.

Because the lid member 24 is made of silicon, the signal processingcircuit 12 is formed in the face thereof (the face opposing to thebottom member 22) while being integrated by means of the semiconductorprocessing such as ion-implantation, lithography, etching and others.

Wires 32B electrically connected with the signal processing circuit 12,which is formed in the lid member 24, are formed radially from thesignal processing circuit 12 toward the four sides of the lid member 24.It is noted that the wires electrically connected with the signalprocessing circuit 12 are disposed at predetermined intervals along thefour sides of the lid member 24.

Here, the bottom member 22 and the lid member 24 are arranged such thatan end of the wire 32A is electrically bonded with an end of the wire32B through a conductive material 50, e.g., an Au bump or the like, atthe end face of the flame member 22B of the bottom member 22 and theedge of the lid member 24. Further, an insulating material 52, e.g.insulating paste, is applied around the conductive material 50 andaround the ends of the wires 32A and 32B to seal and bond them.

Then, a sealing material 54 is applied to seal around the case 20constructed by bonding the bottom member 22 with the lid member 24.

It is noted that although the mode in which the wires 32A and 32B areformed on the surface of the respective members has been explained, theymay be formed within the respective members by forming holes or groovesin the members and by embedding the wires therein.

Next, an exemplary manufacturing method of the semiconductor device 102of the present embodiment will be described. Here, FIGS. 6A-6E and FIGS.7A-7E show manufacturing steps of the semiconductor device of the secondembodiment. It is noted that FIGS. 6A-6E are perspective views showingthe manufacturing steps of the semiconductor device and FIGS. 7A-7E aresection views showing the manufacturing steps of the semiconductordevice.

According to the manufacturing method of the semiconductor device 102 ofthe present embodiment, a silicon wafer 40A for the plate-like member isprepared at first and a large number of chips corresponding to theplate-like members 22A of the bottom member 22 is formed thereon asshown in FIGS. 6A and 7A. Specifically, through holes 26A, through whichthe through wires 32 are embedded, are formed in the plate-like member22A of the bottom member 22 by implementing the three-dimensionalprocessing by using the silicon micro-machining technology for example.

Next, a silicon wafer 40B for the frame member having the same diameterwith the silicon wafer 40A for the plate-like member is prepared and alarge number of chips corresponding to the frame members 22B of thebottom member 22 is formed thereon as shown in FIGS. 6B and 7B.Specifically, openings for forming the frame member 22B of the bottommember 22 are formed by implementing the three-dimensional processing byusing the silicon micro-machining technology for example. Then, thesilicon wafer 42B for the lid member is superimposed on and bonded withthe silicon wafer 40A for the plate-like member by means of anodebonding or metal bonding for example. A silicon wafer 40 for the bottommember, in which a large number of bottom members 22 having the concaveportions 26 is formed, is formed by bonding the two silicon wafers asdescribed above. Here, the concave portions and through holes may beformed within a single silicon wafer as shown in FIGS. 2A and 3A of thefirst embodiment instead of the steps up to FIGS. 6B and 7B.

Next, as seen in FIGS. 6C and 7C, the through wire 32 is embedded at thethrough hole 26A of each of the bottom members 22 formed in the siliconwafer 40 by means of plating and the like and the terminal 30 and theexternal terminal 34 are formed so as to be connected respectively toboth ends of the through wire 32. In addition, the wire 32A, which isconnected with the terminal 30 of the plate-like member 22A and extendsfrom the terminal 30 to the end face of the frame member 22B (the endface on the opposite side to the face bonded with the plate-like member22A) via an inner wall face of the frame member 22B, is formed on eachof the bottom members 22. Here, the conductive material 50, e.g., the Aubump and the like, is formed at the end of the wire 32A.

Then, the semiconductor sensor chip 10 provided on the bottom face ofeach of the bottom members 22 (on the surface of the plate-like member22A) is electrically connected with the terminal 30 provided at one endof the through wire 32 by the wire 36 by carrying out wire-bonding.

Next, the silicon wafer 42 for the lid member that has the same diameterwith the silicon wafer 40 for the bottom member is prepared and a largenumber of chips corresponding to the lid members 24 is formed. Thesilicon wafer 42 is then superimposed on and bonded with the siliconwafer 40 for the bottom member as shown in FIGS. 6D and 7D. It is notedthat the signal processing circuit 12 is formed on a regioncorresponding to each lid member of the silicon wafer 42 by means of thesemiconductor processing and the wire 32B electrically connected withthe signal processing circuit 12 is formed radially from the signalprocessing circuit 12 to each of the four sides of the lid member 24 byplating or the like.

Here, before superimposing the silicon wafer 40 for the bottom memberwith the silicon wafer 42, the insulating material, e.g., the insulatingpaste, is applied to the silicon wafer 40 for the bottom member so as tocover around the conductive material 50 and the end of the wire 32A.However, the insulating material 52 is applied so as to expose an apex(a top surface) of the conductive material 50. Then, the end of the wire32A may be electrically connected with that of the wire 32B via theconductive material 50, e.g., the Au bump or the like, at the end faceof the frame member 22B of the bottom member 22 and the edge of the lidmember 24 and the part around the conductive material 50 and the ends ofthe wires 32A and 32B may be sealed and bonded by the insulatingmaterial, e.g. the insulating paste, by superimposing the silicon wafer40 with the silicon wafer 42, by heating them at predeterminedtemperature and by curing the insulating material.

Next, the two bonded silicon wafers are cut into individual pieces bymeans of a dicing saw or the like as shown in FIGS. 6E and 7E. Afterthat, the sealing material 54 is applied to seal around theindividualized case 20 although not shown.

It becomes possible to obtain the semiconductor device 102 through theprocesses described above.

While the wires 32A and 32B formed respectively on the bottom member 22and the lid member 24 are electrically connected via the conductivematerial 50 in the semiconductor device 102 of the present embodimentdescribed above, it is possible to restrain defective connection of thewires 32A and 32B because the bottom member 22 and the lid member 24 areboth made of silicon and a strain which is otherwise caused by adifference of coefficient of expansion occurs less.

Furthermore, because the wire 32A and 32B formed respectively on thebottom member 22 and the lid member 24 are electrically connected andthe bottom member 22 is bonded with the lid member 24 while sealingaround the conductive material 50 in the semiconductor device 102 of thepresent embodiment, it is possible to restrain defective bonding of thebottom member 22 with the lid member 24 and also to restrain defectiveconnection of the wire 32A with the wire 32B.

In addition, because the insulating material 52 seals around theconductive material 50, i.e., around the part where the bottom member 22is bonded with the lid member 24, it is possible to prevent the sealingmaterial 54 from flowing into the case 20 from the bonding part and toprevent the sealing material 54 from contacting with the semiconductorsensor chip 10 in sealing around the case 20 by the sealing material 54.As a result, it is possible to restrain the semiconductor sensor chip 10from causing defective operation.

Because the semiconductor device 102 of the present embodiment is thesame with the first embodiment other than those described above, itsexplanation will be omitted here.

It is noted that the mode of realizing the electrical connection of thesemiconductor sensor chip 10 by the wire 36 has been explained, theinvention is not limited to that and it is possible to adopt a mode ofrealizing the electrical connection via bumps 10A, e.g., Au bumps andthe like, provided at the bottom face of the semiconductor sensor chip10 for example as shown in FIG. 8. Still more, the mode of mounting thesemiconductor sensor chip 10 on the bottom face of the bottom member 22has been explained in the present embodiment, the invention is not alsolimited to that and it is possible to adopt a mode of mounting thesemiconductor sensor chip 10 on the surface of the lid member 24 asshown in FIG. 9. It is noted that the electrical connection is made viathe bumps 10A, e.g., the Au bumps and the like, provided on the surfaceof the semiconductor sensor chip 10 also in the mode shown in FIG. 9.

Furthermore, while the mode of constructing the bottom member 22 and thelid member 24 of the case 20 by silicon has been explained in thepresent embodiment, the invention is not limited to that and anothersemiconductor material may be applicable as well.

It is then needless to say that any of the embodiments and modesdescribed above should not be construed as definitive and the inventionmay be realized within the scope meeting with the requirements of theinvention described below.

1. A method of fabricating a semiconductor device, comprising: preparinga first semiconductor wafer; forming a concave portion in the firstsemiconductor wafer; disposing a signal processing circuit in theconcave portion; mounting a semiconductor sensor chip on the signalprocessing circuit; connecting a second semiconductor wafer that is aplate-lie member and that covers the concave portion to the firstsemiconductor wafer, said connecting includes bonding the secondsemiconductor wafer to the first semiconductor wafer to form a hollowcase, the semiconductor sensor chip being mounted within the hollowcase, the signal processing circuit being formed in a bottom of theconcave portion and under the semiconductor sensor chip, thesemiconductor sensor chip being supported on the signal processingcircuit and being free of direct contact with the plate-like member; andcutting the first semiconductor wafer and the second semiconductor waferinto individual pieces.
 2. The method recited in claim 1 , wherein thesignal processing circuit processes signals output from thesemiconductor sensor chip.
 3. The method recited in claim 1, furthercomprising applying an insulating material to seal around a portionwhere the first semiconductor wafer is bonded with the secondsemiconductor wafer.
 4. The method recited in claim 1, furthercomprising applying a sealing material to seal around the hollow case.5. The method recited in claim 1, wherein the first and secondsemiconductor wafers are made of the same semiconductor material.
 6. Themethod recited in claim 5, wherein the same semiconductor material issilicon.
 7. The method recited in claim 1, wherein the concave portionis comprised of silicon.
 8. The method recited in claim 7, wherein thesignal processing circuit is directly integrated within the concaveportion.
 9. The method recited in claim 8, wherein the signal processingcircuit is formed by one of ion-implantation, lithography, and etchingof the concave portion.
 10. The method recited in claim 1, wherein anupper surface of the signal processing circuit is substantially coplanarwith a bottom of the concave portion.
 11. The method recited in claim 1,wherein a bottom of the concave portion defines an upper surface of thesignal processing circuit.
 12. The method recited in claim 1, whereinthe second semiconductor wafer is bonded to the first semiconductorwafer using anode bonding or metal bonding.
 13. The method recited inclaim 1, wherein the concave portion is formed by three-dimensionalprocessing.
 14. The method recited in claim 13, wherein thethree-dimensional processing is implemented by using siliconmicro-machining technology.
 15. The method recited in claim 1, whereinsaid forming a concave portion includes forming a plurality of concaveportions in the first semiconductor wafer, with each concave portionhaving a respective signal processing circuit disposed therein.
 16. Themethod recited in claim 15, wherein said mounting a semiconductor sensorchip includes mounting a plurality of semiconductor sensor chips, witheach signal processing circuit having a respective semiconductor sensorchip thereon.
 17. A method of fabricating a semiconductor device,comprising: preparing a first semiconductor wafer; forming a pluralityof concave portions in the first semiconductor wafer; disposing a signalprocessing circuit in each concave portion, so that each concave portionhas a respective signal processing circuit disposed therein; mounting asemiconductor sensor chip on a respective signal processing circuit,each signal processing circuit being formed in a bottom of respectiveconcave portion and under a respective semiconductor sensor chip, therespective semiconductor sensor chips being supported on a correspondingsignal processing circuit and being free of direct contact with thesecond semiconductor wafer; connecting a second semiconductor wafer thatcovers the concave portion to the first semiconductor wafer; and cuttingthe first semiconductor wafer and the second semiconductor wafer intoindividual pieces.